2SD590 Todos los transistores

 

2SD590 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD590

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 90 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: TO39

Búsqueda de reemplazo de transistor bipolar 2SD590

 

2SD590 Datasheet (PDF)

5.1. 2sd596.pdf Size:249K _nec

2SD590
2SD590



5.2. 2sd592 e.pdf Size:50K _panasonic

2SD590
2SD590

Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SB621 and 2SB621A 5.0± 0.2 4.0± 0.2 Features Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to 2SD592 30 VCBO V +0.2 +0.2 base volta

 5.3. 2sd592.pdf Size:46K _panasonic

2SD590
2SD590

Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SB621 and 2SB621A 5.0± 0.2 4.0± 0.2 Features Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to 2SD592 30 VCBO V +0.2 +0.2 base volta

5.4. 2sd596.pdf Size:322K _secos

2SD590
2SD590

2SD596 0.7A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES High DC Current gain A L Complementary to 2SB624 3 3 Top View C B 1 MARKING 1 2 2 K E DV4 D PACKAGE INFORMATION H J F G Millimeter Millimeter Package MPQ Leader Size REF. REF. Min. Max

 5.5. 2sd596.pdf Size:756K _htsemi

2SD590
2SD590

2SD596 TRANSISTOR (NPN) FEATURES SOT-23 High DC Current gain. Complimentary to 2SB624 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1.BASE Symbol Parameter Value Units 2.EMITTER VCBO Collector-Base Voltage 30 V 3.COLLECTOR VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 700 mA PC Collector Power Dissipation 20

5.6. 2sd596 sot-23-3l.pdf Size:378K _lge

2SD590
2SD590

 2SD596 SOT-23-3L Transistor(NPN) 1.BASE SOT-23-3L 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features 2.80 1.60 High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter

5.7. 2sd596 sot-23.pdf Size:364K _lge

2SD590
2SD590

 2SD596 SOT-23 Transistor(NPN) 1.BASE SOT-23 2.EMITTER 3.COLLECTOR Features High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC C

5.8. 2sd596.pdf Size:681K _blue-rocket-elect

2SD590
2SD590

2SD596(BR3DG596M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 高h ,与 2SB624(BR3CG624M)互补。 FE High hFE, complementary pair with 2SB624(BR3CG624M). 用途 / Applications 用于音频放大。 Audio frequency amplifier application. 内部等效电

5.9. 2sd596.pdf Size:1278K _kexin

2SD590
2SD590

SMD Type Transistors NPN Transistors 2SD596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● High DC Current gain. ● Complimentary to 2SB624 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 2

5.10. 2sd597.pdf Size:196K _inchange_semiconductor

2SD590
2SD590

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD597 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 100V(Min) CEO(SUS) ·Excellent Safe Operating Area ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... 2SD586 , 2SD586A , 2SD587 , 2SD587A , 2SD588 , 2SD588A , 2SD589 , 2SD59 , TIP41C , 2SD591 , 2SD592 , 2SD592A , 2SD592ANC , 2SD592NC , 2SD593 , 2SD594 , 2SD596 .

 

 
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