BSS51 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSS50; BSS51; BSS52 NPN Darlington transistors 1997 Sep 03 Product specification Supersedes data of 1997 May 13 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN Darlington transistors BSS50; BSS51; BSS52 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V) 1 emi

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5140V 40 V low VCEsat PNP transistor Product data sheet 2002 Mar 20 Supersedes data of 2001 Oct 19 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140V FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 mm 1.2 mm 0.55 mm ultra thin VCEO coll

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS5120T 20 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 20 V, 1 A PBSS5120T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICM VC

PBSS5160DS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Rev. 03 9 October 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4160DS. 1.2 Features Low collector-emitter saturation voltage VCEsat High c

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Dec 12 NXP Semiconductors Product data sheet 30 V, 1 A PBSS5130T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capabili

PBSS5140T 40 V, 1 A PNP low VCEsat BISS transistor Rev. 04 29 July 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4140T. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5140T PNP BISS transistor Product specification 2000 Nov 16 Philips Semiconductors Product specification PNP BISS transistor PBSS5140T FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low collector-emitter saturation voltage ensures 1 base reduced power consumption. 2 emitter 3 collector APPLICATIONS

PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 18 July 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as sh

DISCRETE SEMICONDUCTORS DATA SHEET age M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product data sheet 2001 Jul 20 Supersedes data of 2001 Mar 27 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140U FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emitte

PBSS5160U 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 04 2 October 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4160U. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4130PANP. NPN/NPN complement PBSS4130PAN. 2. Features and benefits Very low collect

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5160QA 60 V, 1 A PNP low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement PBSS4160QA. 2. Features and benefits Very low collector-emitter

PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor 30 November 2012 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4112PANP. NPN/NPN complement PBSS4112PAN. 1.2 Features and benefit

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4160PANP. NPN/NPN complement PBSS4160PAN. 2. Features and benefits Very low collecto

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5130QA 30 V, 1 A PNP low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement PBSS4130QA. 2. Features and benefits Very low collector-emitter

PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4160T. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement PBSS4160V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficie

PBSS5160PAPS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 24 November 2014 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits Very low collector-emitter saturation volt

NPN BSS50A-51A-52A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS They are NPN transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . PNP complements are the BSS60A 61A 62A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Val

SMD Type Transistors PNP Transistors PBSS5160T-HF (KBSS5160T-HF) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM 1 2 +0.1 +0.05 0.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01 +0.1 1.9 -0.1 Reduces printed-circuit board area required

SMD Type Transistors PNP Transistors PBSS5160T (KBSS5160T) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM 1 2 +0.1 +0.05 0.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01 +0.1 1.9 -0.1 Reduces printed-circuit board area required 1.Base 2.E