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BSS51 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSS51
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 2000
   Paquete / Cubierta: TO5-1
 

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BSS51 Datasheet (PDF)

 ..1. Size:52K  philips
bss50 bss51 bss52 3.pdf pdf_icon

BSS51

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSS50; BSS51; BSS52NPN Darlington transistors1997 Sep 03Product specificationSupersedes data of 1997 May 13File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN Darlington transistors BSS50; BSS51; BSS52FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)1 emi

 0.1. Size:249K  philips
pbss5140v.pdf pdf_icon

BSS51

DISCRETE SEMICONDUCTORS DATA SHEETM3D744PBSS5140V40 V low VCEsat PNP transistorProduct data sheet 2002 Mar 20Supersedes data of 2001 Oct 19NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5140VFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 mm 1.2 mm 0.55 mm ultra thin VCEO coll

 0.2. Size:119K  philips
pbss5120t.pdf pdf_icon

BSS51

DISCRETE SEMICONDUCTORS DATA SHEETM3D088PBSS5120T20 V, 1 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Sep 29NXP Semiconductors Product data sheet20 V, 1 A PBSS5120TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICMVC

 0.3. Size:141K  philips
pbss5160ds.pdf pdf_icon

BSS51

PBSS5160DS60 V, 1 A PNP/PNP low VCEsat (BISS) transistorRev. 03 9 October 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a smallSOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4160DS.1.2 Features Low collector-emitter saturation voltage VCEsat High c

Otros transistores... BSS43 , BSS44 , BSS45 , BSS46 , BSS47 , BSS48 , BSS49 , BSS50 , D965 , BSS52 , BSS53 , BSS53A , BSS53B , BSS54 , BSS54A , BSS54B , BSS55 .

 

 
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