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2N542 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N542
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.025 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 18 MHz
   Capacitancia de salida (Cc): 5 pF
   Ganancia de corriente contínua (hfe): 130
   Paquete / Cubierta: TO5
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2N542 Datasheet (PDF)

 0.1. Size:132K  mospec
 2n5427-29 2n5430.pdf pdf_icon

2N542

AAA

 0.2. Size:17K  semelab
 2n5428a.pdf pdf_icon

2N542

2N5428AMECHANICAL DATAMEDIUM POWERDimensions in mmNPN SILICONTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.Designed for switching andwide - band amplifierapplications1.27 (0.050)4.83 (0.190) 1.91 (0.750)5.33 (0.210)9.14 (0.360)min.TO66 Package.ABSOLUTE MAXIMUM RATINGS (Tcase=25C unless otherwise stated)VCEO Co

 0.3. Size:1285K  sprague
 2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf pdf_icon

2N542

 0.4. Size:45K  inchange semiconductor
 2n5429.pdf pdf_icon

2N542

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5429 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE

MOSTRAR MÁS

Otros transistores... 2N5415S , 2N5416 , 2N5416-220M , 2N5416CSM4 , 2N5417 , 2N5418 , 2N5419 , 2N541A , SS8050 , 2N5420 , 2N5421 , 2N5422 , 2N5423 , 2N5424 , 2N5424A , 2N5425 , 2N5426 .

History: 2SD1879 | MD6003F

 

 
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