2SCR372P Todos los transistores

Data Sheet Midium Power Transistors (120V / 700mA) 2SCR372P Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor MPT3 Features Low saturation voltage VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 50mA) (1) (2) (3) (1) Base (2) Collector Applications Abbreviated symbol GX (3) Emitter Driver Packaging specifications Inner circuit (Unit

2SCR372P 2SCR372PFRA Datasheet NPN 700mA 120V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 120V Base IC 700mA Collector Emitter 2SCR372PFRA 2SCR372P lFeatures (SC-62) 1) Suitable for Middle Power Driver 3) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=500mA/50mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplic

2SCR375P Datasheet Middle Power Transistor(120V/1.5A) lOutline l SOT-89 Parameter Value SC-62 VCEO 120V IC 1.5A MPT3 lFeatures lInner circuit l l Low saturation voltage VCE(sat)=300mV(Max.) (IC/IB=800mA/80mA) lApplication l LOW FREQUENCY AMPLIFIER lPackaging specifications l Basic Package Taping Reel size Tape width Par

2SCR346P Datasheet NPN 100mA 400V Middle Power Transistor lOutline l SOT-89 Parameter Value SC-62 VCEO 400V IC 100mA MPT3 lFeatures lInner circuit l l 1)Complementary PNP Types 2SAR340P 2)Low VCE(sat) VCE(sat)=300mV(Max) (IC/IB=20mA/2mA) lApplication l LOW FREQUENCY AMPLIFIER lPackaging specifications l Package Taping Re