2SCR372P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SCR372P
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 220 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: MPT3
Búsqueda de reemplazo de transistor bipolar 2SCR372P
2SCR372P Datasheet (PDF)
2scr372p.pdf
Data SheetMidium Power Transistors (120V / 700mA) 2SCR372P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorMPT3 FeaturesLow saturation voltageVCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 50mA)(1) (2) (3)(1) Base(2) Collector ApplicationsAbbreviated symbol : GX(3) EmitterDriver Packaging specifications Inner circuit (Unit :
2scr372pfra.pdf
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2scr375p.pdf
2SCR375PDatasheetMiddle Power Transistor(120V/1.5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO120VIC1.5AMPT3lFeatures lInner circuitl lLow saturation voltageVCE(sat)=300mV(Max.)(IC/IB=800mA/80mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificationslBasicPackage Taping Reel size Tape widthPar
2scr346p.pdf
2SCR346PDatasheetNPN 100mA 400V Middle Power TransistorlOutlinel SOT-89 Parameter Value SC-62 VCEO400VIC100mAMPT3lFeatures lInner circuitl l1)Complementary PNP Types:2SAR340P2)Low VCE(sat)VCE(sat)=300mV(Max)(IC/IB=20mA/2mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificationslPackage Taping Re
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
