KTC8050S Todos los transistores

SEMICONDUCTOR KTC8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.10 VCBO Collector-Base Voltag

SEMICONDUCTOR KTC8050A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8550A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.0

SEMICONDUCTOR KTC801F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES B Thin fine pitch super mini 6pin. B1 Excellent temperature response between these 2 transistor. DIM MILLIMETERS _ + A 1.0 0.05 High pairing property in hFE. _ + A1 0.7 0.05 1 6 The follwing characteristics are common for Q1, Q2. _ + B 1.0 0.05 _

SEMICONDUCTOR KTC801E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 6 DIM MILLIMETERS Excellent temperature response between these 2 transistor. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 High pairing property in hFE. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 The follwing characteri

SEMICONDUCTOR KTC801U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM MILLIMETERS 1 6 _ A super-minimold package houses 2 transistor. A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 Excellent temperature response between these 2 transistor. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High pairing property in hFE. C 0.65 T

SEMICONDUCTOR KTC802E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES High Current. 1 6 DIM MILLIMETERS Low VCE(sat) . _ A 1.6 + 0.05 _ A1 1.0 + 0.05 VCE(sat) 250mV at IC=200mA/IB=10mA. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Complementary to KTA702E. C 0.50 3 4 _ D 0.2 + 0.05 _ H 0.5 + 0.05 _ J 0.12 + 0.05