LB120A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LB120A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 600 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO92
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LB120A Datasheet (PDF)
lb120a.pdf

DC COMPONENTS CO., LTD.LB120ADISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTORDescriptionDesigned for use in high-voltage switchingapplications.TO-92Pinning1 = Emitter2 = Collector .190(4.83).170(4.33)3 = Base2oTyp.190(4.83).170(4.33)Absolute Maximum Ratings(TA=25oC)2oTypCharacteristic Symbol Rating Unit.500Min(
hlb120a.pdf

Spec. No. : HE6412HI-SINCERITYIssued Date : 1998.12.01Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/4HLB120ANPN Triple Diffused Planar Type High Voltage TransistorsDescriptionThe HLB120A is a medium power transistor designed for use in switchingapplications.TO-92Features High Breakdown Voltage Low Collector Saturation Voltage Fast Switching S
lb120a3.pdf

Spec. No. : C618A3 Issued Date : 2009.07.07 CYStech Electronics Corp.Revised Date : Page No. : 1/3 General Purpose NPN Epitaxial Planar Transistor LB120A3Features Low collector saturation voltage High breakdown voltage, V =400V (min.) CEO Pb-free package Symbol Outline LB120A3 TO-92 BBase CCollector EEmitter E C B Absolute Maximum Ratings
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SC988B | 2N5862 | KRC663U | 2SC765 | NKT108 | DTC123JEB | 2SB443A
History: 2SC988B | 2N5862 | KRC663U | 2SC765 | NKT108 | DTC123JEB | 2SB443A



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