2SB772-Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB772-Q
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT89

Búsqueda de reemplazo de transistor bipolar 2SB772-Q

2SB772-Q Datasheet (PDF)

..1. Size:490K cn evvo
2sb772-r 2sb772-q 2sb772-p 2sb772-e.pdf

B772PNP Transistors Features3 PNP transistor High current output up to 3A2 Low Saturation Voltage1.Base1 Complement to 2SD8822.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO -40 VCollector to Emitter Voltage VCEO -30 VEmitter to Base Voltage VEBO -6 V

7.1. Size:287K mcc
2sb772-r.pdf

2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

7.2. Size:287K mcc
2sb772-y.pdf

7.3. Size:287K mcc
2sb772-gr.pdf

7.4. Size:287K mcc
2sb772-o.pdf

7.5. Size:174K fci
2sb772-s.pdf

7.6. Size:891K kexin
2sb772-126.pdf

DIP Type TransistorsPNP Transistors2SB772TO-126Unit:mm8.00 0.30 3.25 0.20 Features PNP transistor High current output up to 3A Low Saturation Voltage3.20 0.10 Complement to 2SD882(1.00) (0.50)0.75 0.101.75 0.201.60 0.100.75 0.101 2 3#1+0.102.28TYP 2.28TYP 0.50 0.05[2.280.20] [2.280.20]1. Base2. Collector3. Emitte

7.7. Size:5206K msksemi
2sb772-ms.pdf

www.msksemi.com2SB772-MSSemiconductor CompianceSemiconductor Compiance1. BASE TRANSISTOR (PNP) 2. COLLETOR FEATURES Low speed switching 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A

Otros transistores... MMBT5551Q , MMBTA06Q , S8050-H , S8050-L , S9013L , S9015H , S9015L , 2SA812H , BC549 , 2SC1623-L4 , 2SC2412Q , 2SC2412R , 2SC2412S , 2SC3356-SC1-R-R , 2SC3356-SD3-R-R , 2SC3356-SF3-R-R , 2SC3356-T93-R-K .

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Recientemente añadidas las descripciónes de los transistores:

BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS