2SA506 Todos los transistores

 

2SA506 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA506

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.075 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 18 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.005 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (ft): 50 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hfe): 20

Paquete / Cubierta: TO72

Búsqueda de reemplazo de transistor bipolar 2SA506

 

2SA506 Datasheet (PDF)

 9.1. Size:756K  1
2sa509.pdf

2SA506
2SA506

 9.2. Size:94K  toshiba
2sa496 2sa505.pdf

2SA506
2SA506

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:306K  vishay
vs-fa72sa50lc.pdf

2SA506
2SA506

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.4. Size:214K  inchange semiconductor
2sa505.pdf

2SA506
2SA506

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

Otros transistores... 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , TIP127 , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 , 2SA1815-5 , 2SA182 , 2SA1822 , 2SA183 .

 

 
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