View ttk2837 datasheet:

TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TTK2837 Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source on-resistance RDS(ON) = 0.22 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 10 A (VDS = 500 V) Enhancement mode Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) 2.0 0.3 Absolute Maximum Ratings (Ta = 25 C) 1.0 0.3 0.25 Characteristics Symbol Rating Unit 5.45 0.2 5.45 0.2 Drain-source voltage VDSS 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 20 1 2 3 Drain current A Pulse (t = 1 ms) IDP 80 (Note 1) 1. Gate 2. Drain(heat sink) Drain power dissipation (Tc = 25 C) PD 280 W 3. Source Single pulse avalanche energy EAS 470 mJ JEDEC (Note 2) JEITA SC-65 Avalanche current IAR 20 A... See More ⇒

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