View ap3402geh ap3402gej datasheet:

AP3402GEH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 35V D Single Drive Requirement RDS(ON) 18m Surface Mount Package ID 38A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-resistance and cost- TO-252(H) S effectiveness. The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version G (AP3402GEJ) are available for low-profile applications. D TO-251(J) S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 35 V VGS Gate-Source Voltage 20 V Continuous Drain Current, VGS @ 10V ID@TC... See More ⇒

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 ap3402geh ap3402gej.pdf Design, MOSFET, Power

 ap3402geh ap3402gej.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ap3402geh ap3402gej.pdf Database, Innovation, IC, Electricity