View apt1001r1bn datasheet:

D TO-247 G APT1001R1BN 1000V 10.5A 1.10 S APT1001R3BN 1000V 10.0A 1.30 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 1001RBN 1001R3BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25 C 10.5 10 Amps IDM Pulsed Drain Current 1 42 40 VGS Gate-Source Voltage 30 Volts Total Power Dissipation @ TC = 25 C 310 Watts PD Linear Derating Factor 2.48 W/ C TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 C TL Lead Temperature 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT APT1001R1BN 1000 Drain-Source Breakdown Voltage BVDSS Volts (VGS = 0V, ID = 250 A) APT1001R3BN 1000 On State Drain Cur... See More ⇒

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