View apt1001r1bvfr datasheet:

APT1001R1BVFR 1000V 11A 1.100 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tested D FREDFET Lower Leakage Popular TO-247 Package G Faster Switching S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT1001R1BVFR UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 11 Amps IDM Pulsed Drain Current 1 44 VGS Gate-Source Voltage Continuous 30 Volts VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25 C 280 Watts PD Linear Derating Factor 2.24 W/ C T... See More ⇒

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