View apt1001r1hvr datasheet:

APT1001R1HVR 1000V 9A 1.100 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower Leakage Popular TO-258 Package G S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT1001R1HVR UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 9 Amps IDM Pulsed Drain Current 1 36 VGS Gate-Source Voltage Continuous 30 Volts VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25 C 200 Watts PD Linear Derating Factor 1.6 W/ C TJ,TSTG Operating and Storage Junction Temperature ... See More ⇒

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