View cep6036 ceb6036 datasheet:

CEP6036/CEB6036 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 135A, RDS(ON) = 4.6m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Drain Current-Continuous @ TC = 25 C 135 A ID @ TC = 100 C 95 A Drain Current-Pulsed a IDM 540 A Maximum Power Dissipation @ TC = 25 C 167 W PD - Derate above 25 C 1.1 W/ C Single Pulsed Avalanche Energy d EAS 400 mJ Single Pulsed Avalanche Current d IAS 40 A TJ,Tstg Operating and Store Temperature Range -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal... See More ⇒

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