View s9013 detailed specification:
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD S9013 MAXIMUM RATINGS (T =25 ) a Characteristic Symbol Rating Unit Collector-Base voltage V 40 Vdc CBO - -Collector-Emitter Voltage V 30 Vdc CEO - Emitter-Base voltage V 5.0 Vdc EBO - Collector Current-Continuous Ic 500 mAdc - Base-Current I 50 mAdc B Collector Power Dissipation P 300 mW C Junction Temperature T 150 j Storage Temperature Range -55 150 T stg DEVICE MARKING S9013=J3 HFE 200-300 1 ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD S9013 ELECTRICAL CHARACRTERISTICS (T =25 un... See More ⇒
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s9013.pdf Design, MOSFET, Power
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BJT: GA1A4M | SBT42 | 2SA200-Y
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