All Transistors. Datasheet

 

View d965-kehe d9cu datasheet:

d965-kehe_d9cud965-kehe_d9cu

Guangdong Province Jieyang Kehe Ele ctronic Industrial Co., Ltd. TO-126 Plastic-Encapsulate Transistors D965 TRANSISTOR NPN FEATURES Power dissipation W Tamb=25 PCM 0.75 Collector current ICM 5 A Collector-base voltage V(BR)CBO 42 V ELECTRICAL CHARACTERISTICS Tamb=25 specified unless otherwise Parameter Symbol Test conditions MIN TYP MAX UNIT Ic=1mA IE=0 Collector-base breakdown voltage V(BR)CBO 42 V mA IB=0 Collector-emitter breakdown voltage V(BR)CEO Ic= 1 22 V A IC=0 Emitter-base breakdown voltage V(BR)EBO IE= 10 6 V A Collector cut-off current ICBO VCB= 30 V , IE=0 0.1 VEB= 6 V IC=0 A Emitter cut-off current IEBO 0.1 VCE= 2 V, IC= 0.15 HFE 1 150 mA DC current gain HFE 2 VCE= 2V, IC = 500 mA 340 950 VCE= 2V, IC = 2000 HFE 3 150 mA Collector-emitter saturation voltage VCE(sat) IC=3000mA,IB=10... See More ⇒

 

Keywords - ALL TRANSISTORS DATASHEET

 d965-kehe d9cu.pdf Design, MOSFET, Power

 d965-kehe d9cu.pdf RoHS Compliant, Service, Triacs, Semiconductor

 d965-kehe d9cu.pdf Database, Innovation, IC, Electricity

 

 
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