View mdt40p10d datasheet:

Silicon P-Channel Power MOSFET Description The MDT40P10D uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features VDS= -100V, ID=-40A Low ON Resistance Low Reverse transfer capacitances Schematic diagram 100% Single Pulse avalanche energy Test Application Power switching application Adapter and charger TO-252 Electrical Characteristics @ Ta=25 (unless otherwise specified) Absolute Maximum Ratings Symbol Parameter Value Units V Drain-to-Source Breakdown Voltage -100 V DSS I Drain Current (continuous) at Tc=25 -40 A D I Drain Current (pulsed) -120 A DM V Gate to Source Voltage +/-20 V GS P Total Dissipation at Tc=25 180 W tot T Max. Operating Junction Temperature 175 j E Single Pulse Avalanche Energy 700 mJ AS www.mns-kx.com Electrical Param... See More ⇒

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