View 2sd965-r 2sd965-s datasheet:

2SD965 TRANSISTOR (NPN) SOT-89 FEATURES Low Collector-Emitter Saturation Voltage 1. BASE Large Collector Power Dissipation and Current 2. COLLECTOR Mini Power Type Package 3. EMITTER D 965 MARKING MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base Voltage 7.5 V ICM Collector Current 5 A PC Collector Power Dissipation 750 mW R JA Thermal Resistance From Junction To Ambient 167 /W Tj Junction Temperature 150 Tstg Storage Temperature -55 +150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100 A,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage V(... See More ⇒

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