View si8205a datasheet:

SOT-23-6 Plastic-Encapsulate MOSFETS SI8205A Dual N-Channel MOSFET SI8205A V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.022 @ 4.5V 20V 6.0A 0.030 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLICATION Battery Protection Load Switch Power Management Y year code W week code ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 10 V Continuous Drain Current ID 6 A Pulsed Drain Current (note 1) IDM 20 A Thermal Resistance from Junction to Ambient (note 2) R JA 100 /W Junction Temperature TJ 150 Storage Temperature TSTG -55 +150 Lead Temperature for Soldering Purposes(1/8 from case for 10 s) TL ... See More ⇒

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