View 2sj377 datasheet:

2SJ377www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol Limit UnitVGSGate-Source Voltage 20 VTC = 25 C- 30Continuous Drain Current (TJ = 175 C) IDTC = 100 C- 25IDMPulsed Drain Current - 50 AContinuing Source Current (Diode Conduction) IS- 20IASAvalanche Current - 20Single Pulse Avalanche Energy L = 0.1 mH EAS7.2 mJTC = 25 C34aPDMaximum Power Dissipation WTA = 25 C4bTJ, TstgOperating Junction and Storage Temperature Range - 55 to 175 CTHERMAL RESISTANCE RATINGS Parameter Symbol Typical

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