View ap4435gj datasheet:

AP4435GJ www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.022 at VGS = - 4.5 V - 35 APPLICATIONS TO-251 Load Switch S Battery Switch G D P-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Unit VDS Drain-Source Voltage - 30 V VGS Gate-Source Voltage 20 TC = 25 C - 40 TC = 70 C - 35 Continuous Drain Current (TJ = 150 C) ID TA = 25 C - 30.0a, b a, b TA = 70 C - 28 A IDM - 150 Pulsed Drain Current TC = 25 C - 3.5 IS Continuous Source-Drain Diode Current TA = 25 C - 2.1a, b TC = 25 C 40 TC = 70 C 32 PD Maximum Power Dissipation W TA = 25 C 2.5a, b T... See More ⇒

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