View irlms2002tr datasheet:

IRLMS2002TR www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/DC Converters, High Speed Switching D 1 6 D 5 D 2 D G 3 4 S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 TC = 25 C 6e TC = 70 C 6e Continuous Drain Current (TJ = 150 C) ID TA = 25 C 5.5b, c TA = 70 C A 4.4b, c Pulsed Drain Current (t = 300 s) IDM 25 TC = 25 C 2.1 Continuous Source-Drain Diode Current IS TA = 25 C 1.1b, c TC = 25 C 2.5 ... See More ⇒

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