View yjs8205a datasheet:

RoHS COMPLIANT YJS8205A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 5.5A D R ( at V =4.5V) 25mohm DS(ON) GS R ( at V =2.5V) 32mohm DS(ON) GS R ( at V =1.8V) 49mohm DS(ON) GS 100% V Tested DSGeneral Description Trench Power MV MOSFET technology High Power and current handing capability SOT-23-6L Applications PWM application Load switch Absolute Maximum Ratings (T =25unless otherwise noted) A Parameter Symbol Limit UnitDrain-source Voltage VDS 20 VGate-source Voltage VGS 10 V TA=25 5.5 Drain Current ID A TA=70 4.4 Pulsed Drain Current A IDM 19 A TA=25 1.25 W Total Power Dissipation PD TA=70 0.8 W Thermal Resistance Junction-to-Ambient B RJA 100 / W Junction and Storage Temperature Range TJ ,TSTG -55+150

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