View btd965la3 datasheet:

Spec. No. C852A3 Issued Date 2004.07.02 CYStech Electronics Corp. Revised Date 2007.04.18 Page No. 1/5 Low VCE(sat) NPN Planar Transistor BTD965LA3 Features High current capability Low collector-to-emitter saturation voltage High allowable power dissipation Pb-free package Applications Relay drivers, lamp drivers, motor drivers, strobes Symbol Outline BTD965LA3 TO-92 B Base C Collector E Emitter E C B Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) ICP 9 A Collector Power Dissipation (Note) PD 750 mW Junction Temperature Tj 150 C Storage Temperature Tstg -55 +150 C Note when a device is mounted on a glass epoxy board, mea... See More ⇒

Keywords - ALL TRANSISTORS DATASHEET

 btd965la3.pdf Design, MOSFET, Power

 btd965la3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 btd965la3.pdf Database, Innovation, IC, Electricity