View btd965n3 datasheet:

Spec. No. C847N3 Issued Date 2003.07.02 CYStech Electronics Corp. Revised Date 2013.01.03 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD965N3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386N3 Symbol Outline BTD965N3 SOT-23 B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) ICP 8 (Note ) A Power Dissipation Pd 225 mW Thermal Resistance, Junction to Ambient R JA 556 C/W Junction Temperature Tj 150 C Storage Temperature Tstg -55 +150 C Note Single Pulse Pw 350 s, Duty 2%. BTD2098N3 CYStek Product Sp

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