View bs170 datasheet:

April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect High density cell design for low RDS(ON). transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch. cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide Rugged and reliable. rugged, reliable, and fast switching performance. They can High saturation current capability. be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. _______________________________________________________________________________ D G S Absolute Maximum Ratings TA = 2

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