View buz11 datasheet:

BUZ11 Data Sheet June 1999 File Number 2253.2 30A, 50V, 0.040 Ohm, N-Channel Power Features MOSFET 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040 (BUZ1 field effect transistor designed for applications such as SOA is Power Dissipation Limited 1) switching regulators, switching converters, motor drivers, Nanosecond Switching Speeds relay drivers and drivers for high power bipolar switching /Sub- transistors requiring high speed and low gate drive power. ject Linear Transfer Characteristics This type can be operated directly from integrated circuits. (30A, High Input Impedance Formerly developmental type TA9771. 50V, Majority Carrier Device 0.040 Ordering Information Related Literature Ohm, - TB334 Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND N- ... See More ⇒

Keywords - ALL TRANSISTORS DATASHEET

 buz11.pdf Design, MOSFET, Power

 buz11.pdf RoHS Compliant, Service, Triacs, Semiconductor

 buz11.pdf Database, Innovation, IC, Electricity