All Transistors. Equivalents Search

View fqa24n50 f109 detailed specification:

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 90 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, motor drive, and welding machine. D G TO-3PN G D S S FQA Series AbsoIute Maximum Ratings TC = 25 C unless otherwise noted SymboI Paramete... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 fqa24n50 f109.pdf Design, MOSFET, Power

 fqa24n50 f109.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqa24n50 f109.pdf Database, Innovation, IC, Electricity