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October 2008QFETFQB11P06 / FQI11P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.4A, -60V, RDS(on) = 0.175 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand a high energy pulse in the Improved dv/dt capabilityavalanche and commutation modes. These devices are 175C maximum junction temperature ratingwell suited for low voltage applications such as automotive, RoHS Compliant DC/DC converters, and high efficiency switching for powermanagement in portable and battery operated prod

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 fqb11p06tm fqb11p06 fqi11p06 fqi11p06tu.pdf Design, MOSFET, Power

 fqb11p06tm fqb11p06 fqi11p06 fqi11p06tu.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqb11p06tm fqb11p06 fqi11p06 fqi11p06tu.pdf Database, Innovation, IC, Electricity