View irf9540 rf1s9540sm datasheet:

IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power Features MOSFETs 19A, 100V These are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200 field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of SOA is Power Dissipation Limited operation. All of these power MOSFETs are designed for Nanosecond Switching Speeds applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Linear Transfer Characteristics power bipolar switching transistors requiring high speed and High Input Impedance low gate drive power. They can be operated directly from Related Literature integrated circuits. - TB... See More ⇒

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