View irf9630 rf1s9630sm datasheet:

IRF9630, RF1S9630SM Data Sheet January 2002 6.5A, 200V, 0.800 Ohm, P-Channel Power Features MOSFETs 6.5A, 200V These are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800 field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of SOA is Power Dissipation Limited operation. All of these power MOSFETs are designed for Nanosecond Switching Speeds applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other Linear Transfer Characteristics high-power switching devices. The high input impedance High Input Impedance allows these types to be operated directly from integrated Related Literature circuits. - TB334 Guidel... See More ⇒

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