View 2n2907as datasheet:

SEMICONDUCTOR 2N2907AS TECHNICAL DATA General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-23 package which 3 is designed for low power surface mount applications. 2 Features 1 compliance with RoHS requirements. We declare that the material of product SOT 23 ORDERING INFORMATION Device Maring Shipping 3 2N2907AS 2F 3000 / Tape & Ree l COLLECTOR 1 BASE MAXIMUM RATINGS (TA = 25 C) 2 Rating Symbol Max Unit EMITTER Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -600 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (Note 1) PD 225 mW TA = 25 C Thermal Resistance, R 556 C/W JA Junction-to-Ambient Operating and Storage ... See More ⇒

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 2n2907as.pdf Design, MOSFET, Power

 2n2907as.pdf RoHS Compliant, Service, Triacs, Semiconductor

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