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SEMICONDUCTOR FTK40N10D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION DIM MILLIMETERS This advanced high voltage MOSFET is designed to stand high A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 energy in the avalanche mode and switch efficiently. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 This new high energy device also offers a drain H H 1 00 MAX I 2 30 0 2 L F F J 0 5 0 1 Desighed for high voltage, high speed power supplies , L 0 50 0 10 1 2 3 O 1 6 0 2 Q 0 95 MAX converters, power motor controls and bridge circuits 1 GATE power supplies 2 DRAIN FEATURE 3 SOURCE High density cell design for ultra low Rdson Fully characterized avalanche voltage and current D-PAK (TO-252) Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capabili... See More ⇒

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