View 2sk3875-01 datasheet:

2SK3875-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 900 V Equivalent circuit schematic VDSX 900 V VGS=-30V Continuous Drain Current ID 13 A Drain(D) Pulsed Drain Current ID(puls] 52 A Gate-Source Voltage VGS 30 V Non-Repetitive Note *1 Maximum Avalanche current IAS 13 A Gate(G) Repetitive Source(S) Maximum Avalanche current IAR 6.5 A Non-Repetitive EAS 1006 mJ Note *2 ... See More ⇒

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