View fgw75n60h datasheet:

http //www.fujielectric.com/products/semiconductor/ FGW75N60H Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Absolute Maximum Ratings (at TC=25 C unless otherwise specified) Items Symbols Characteristics Units Remarks Collector Collector-Emitter Voltage VCES 600 V Gate-Emitter Voltage VGES 20 V TC=25 C, Tj=150 C IC@25 100 A DC Collector Current Note *1 IC@100 75 A TC=100 C, Tj=150 C Pulsed Collector Current ICP 225 A Note *2 Gate Turn-Off Safe Operating Area - 225 A VCE 600V, Tj 175 C VCC 300V, VGE=12V Short Circuit Withstand Time tSC 5 s Tj 150 C Maximum Power Dissipation ... See More ⇒

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