View pt8205a datasheet:

PT8205A 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 38m RDS(ON), Vgs@ 4.5V, Ids@ 6A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications 1 8 D1 D2 2 7 S1 S2 3 6 S1 S2 4 5 G1 G2 TSSOP-8 Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 1.20 MAX. E1 4.50 4.30 A1 0.05 0.65BSC 0.15 . e A2 0.80 1.05 L 0.45 0.75 b 0.19 0.30 0 10 C 0.90 0.20 D 2.90 3.00 E 6.40BSC Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 12 Continuous Drain Current ID 6 A Pulsed Drain Current 1) IDM 20 TA = 25oC 1.6 Maximum Power Dissipation PD W ... See More ⇒

Keywords - ALL TRANSISTORS DATASHEET

 pt8205a.pdf Design, MOSFET, Power

 pt8205a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 pt8205a.pdf Database, Innovation, IC, Electricity