View 2n3906 datasheet:

isc Silicon PNP Power Transistor 2N3906 DESCRIPTION Low voltage( max .40V ) Low current ( max .200mA ) NPN complement to Type 2N3904. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching Amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -200 mA C I Collector Current-Peak -300 mA CM I Peak base current -100 mA BM Ptot Total Power Dissipation -500 mW T Junction Temperature -65 150 J Storage Temperature -65 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R thermal resistance from junction to ambient 250 K/W th j-a 1 isc website www.iscsemi.com isc & iscsemi is registered ... See More ⇒

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