View 2sc2625 datasheet:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2625 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V CBO V Collector-Emitter Voltage 400 V CEO V Collector-Emitter Voltage 400 V CEO(SUS) V Emitter-Base voltage 7 V EBO I Collector Current-Continuous 10 A C I Base Current-Continuous 3 A B Collector Power Dissipation P 80 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 1.17 /W... See More ⇒

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