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View 2sc6090 detailed specification:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6090 DESCRIPTION Collector-Base Breakdown Voltage- V = 1500V (Min) (BR)CEO High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 700 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 10 A C I Collector Current-Pulse 25 A CP Collector Power Dissipation 2 @ T =25 a P W C Collector Power Dissipation 35 @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc Website www.iscsemi.cn isc & iscsemi is registered trademark INCHANGE Semiconductor isc... See More ⇒

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