View 2sd1243 detailed specification:
isc Product Specification isc Silicon NPN Power Transistor 2SD1243 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifiers . Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 8 V EBO I Collector Current-Continuous 10 A C I Collector Current-Peak 15 A CM Collector Power Dissipation P 100 W C @T =25 C T Junction Temperature 150 j T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Product Specification isc Silico... See More ⇒
Keywords - ALL TRANSISTORS SPECS
2sd1243.pdf Design, MOSFET, Power
2sd1243.pdf RoHS Compliant, Service, Triacs, Semiconductor
2sd1243.pdf Database, Innovation, IC, Electricity
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet
