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View 2sd895 detailed specification:

isc Silicon NPN Power Transistor 2SD895 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 85V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB775 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 35W audio frequency output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 85 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 6 A C I Collector Current-Pulse 10 A CP Collector Power Dissipation P 60 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -40 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD895 ELEC... See More ⇒

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