View 3dd13009n datasheet:

isc Silicon NPN Power Transistor 3DD13009N DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 700 V CEV V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current-Continuous 12 A C I Collector Current-peak 24 A CM I Base Current 6 A B I Base Current-Peak 12 A BM TO-220 100 Collector Power Dissipation P W C T =25 C TO-3PN 120 T Junction Temperature 150 i T Storage Temperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT TO-220 1.25 Thermal Resistance, R /W th j-c... See More ⇒

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