View 3dd13009nl datasheet:

isc Silicon NPN Power Transistor 3DD13009NL DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 600 V CEV V Collector-Emitter Voltage 350 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current-Continuous 15 A C I Collector Current-peak 30 A CM I Base Current 7 A B I Base Current-Peak 14 A BM TO-220 110 Collector Power Dissipation P W C T =25 C TO-3PN 130 T Junction Temperature 150 i T Storage Temperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT TO-220 1.14 Thermal Resistance, R /W th j-... See More ⇒

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