View bd333 datasheet:

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD333 DESCRIPTION High DC Current Gain Complement to type BD334 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 80 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 6 A C I Base Current-Peak 0.15 A BM Collector Power Dissipation P 60 W C @ T =25 C T Junction Temperature 150 J Storage Temperature Range -65 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2.08 /W R th j-c Thermal Resistance,Junction t... See More ⇒

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