View bdx53c datasheet:

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDX53CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(sus)High DC Current Gain: h = 750(Min) @I = 3AFE CLow Collector Saturation Voltage: V = 2.0 V (Max) @ I = 3.0 ACE(sat) CComplement to Type BDX54CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emitter Voltage 100 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 8 ACI Collector Current-Peak 12 ACPI Base Current-Continuous 0.2 ABCollector Power DissipationP 65 WC@ T =25CT Junction Temperature 150 JT Storage Temperatu

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