View bu2506dx datasheet:

isc Silicon NPN Power Transistor BU2506DX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0) 1500 V CES BE V Collector-Emitter Voltage 700 V CEO V Emitter-Base Voltage 7.5 V EBO I Collector Current- Continuous 5 A C I Collector Current-Peak 8 A CM I Base Current- Continuous 3 A B I Base Current-Peak 5 A BM Collector Power Dissipation P 45 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -65 150 stg SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2.8 /W R... See More ⇒

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