View bu807 datasheet:

isc Silicon NPN Darlington Power Transistor BU807 DESCRIPTION High Voltage V = 330V(Min) CBO Low Saturation Voltage- V = 1.5V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits in TV s and CRT s. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 330 V CBO V Collector-Emitter Voltage 330 V CEV V Collector-Emitter Voltage 150 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 8 A C I Collector Current-Peak 15 A CM I Base Current 2 A B Collector Power Dissipation P 60 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Darlington Power... See More ⇒

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