View buz11 datasheet:

isc N-Channel Mosfet Transistor BUZ11 FEATURES Static Drain-Source On-Resistance R = 0.04 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 50 V DSS GS V Gate-Source Voltage 20 V GS I Drain Current-continuous@ TC=30 30 A D I Drain Current-Single Plused 120 A DM P Total Dissipation@TC=25 75 W tot T Max. Operating Junction Temperature 150 j T Storage Temperature Range -55 150 stg THERMAL CHAR... See More ⇒

Keywords - ALL TRANSISTORS DATASHEET

 buz11.pdf Design, MOSFET, Power

 buz11.pdf RoHS Compliant, Service, Triacs, Semiconductor

 buz11.pdf Database, Innovation, IC, Electricity