View irf9540n datasheet:

INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF9540N,IIRF9540N FEATURES Static drain-source on-resistance RDS(on) 0.117 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage -100 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous -23 A D I Drain Current-Single Pulsed -76 A DM P Total Dissipation @T =25 140 W D C Max. Operating Junction Temperature 175 T j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(j-c... See More ⇒

Keywords - ALL TRANSISTORS DATASHEET

 irf9540n.pdf Design, MOSFET, Power

 irf9540n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf9540n.pdf Database, Innovation, IC, Electricity