View irfps37n50a datasheet:

isc N-Channel MOSFET Transistor IRFPS37N50A FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate-Source Voltage-Continuous 30 V GS I Drain Current-Continuous 36 A D I Drain Current-Single Pluse 144 A DM P Total Dissipation @T =25 446 W D C Max. Operating Junction Temperature 150 T J Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance, Junction to Case 0.28 th j-c 1 isc website www.iscsemi

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